 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 45 Volt VDS * RDS(on)=14 BS250P D G S REFER TO ZVP2106A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb =25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25C Operating and Storage Temperature Range SYMBOL VDS ID I DM VGS Ptot Tj:Tstg -45 E-Line TO92 Compatible VALUE UNIT V mA A V mW C -230 -3 20 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current SYMBOL BVDSS VGS(th) IGSS IDSS MIN. -45 -1 -3.5 -20 -500 14 150 TYP. MAX. UNIT V V nA nA CONDITIONS. ID=-100A, VGS=0V ID=-1mA, VDS=VGS VGS=-15V, VDS=0V VGS=0V, VDS=-25V VGS=-10V, ID=-200mA VDS=-10V, ID=-200mA Static Drain-Source RDS(on) on-State Resistance (1) Forward gfs Transconductance (1)(2) Input Capacitance (2) Turn-On Time (2)(3) Turn-Off Time (2)(3) Ciss t(on) t(off) mS 60 20 20 pF ns ns VGS=0V, VDS=-10V f=1MHz VDD-25V, ID=-500mA (1) Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% (2) Sample test (3) Switching times measured with a 50 source impedance and <5ns rise time on a pulse generator 3-28 |
Price & Availability of BS250P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |